Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2357012
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dc.titleAb initio studies on Schottky barrier heights at metal gate/LaAlO 3 (001) interfaces
dc.contributor.authorDong, Y.F.
dc.contributor.authorMi, Y.Y.
dc.contributor.authorFeng, Y.P.
dc.contributor.authorHuan, A.C.H.
dc.contributor.authorWang, S.J.
dc.date.accessioned2014-10-16T09:14:53Z
dc.date.available2014-10-16T09:14:53Z
dc.date.issued2006
dc.identifier.citationDong, Y.F., Mi, Y.Y., Feng, Y.P., Huan, A.C.H., Wang, S.J. (2006). Ab initio studies on Schottky barrier heights at metal gate/LaAlO 3 (001) interfaces. Applied Physics Letters 89 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2357012
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/95707
dc.description.abstractSchottky barrier heights (SBHs) at metal gate/LaAlO3 (001) interfaces were studied by using ab initio calculations based on density functional theory. Three kinds of metals, Al, Rh, and Pt, were considered with various interface chemistries on LaAlO3 (001) surface. It was found that the Fermi level of metal gates is not pinned at metal gate/LaAlO 3 interfaces. The SBH is largely determined by the interface chemistry. The interface metal up to three layers can ultimately decide the SBH, and the SBH at the metal gate/LaAlO3 interface can be efficiently tuned by including monolayer heterovalent metal at the interface. © 2006 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2357012
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.2357012
dc.description.sourcetitleApplied Physics Letters
dc.description.volume89
dc.description.issue12
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000240680300066
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