Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.355873
DC Field | Value | |
---|---|---|
dc.title | A novel scanning electron microscope method for the investigation of charge trapping in insulators | |
dc.contributor.author | Gong, H. | |
dc.contributor.author | Ong, C.K. | |
dc.date.accessioned | 2014-10-16T09:14:21Z | |
dc.date.available | 2014-10-16T09:14:21Z | |
dc.date.issued | 1994 | |
dc.identifier.citation | Gong, H., Ong, C.K. (1994). A novel scanning electron microscope method for the investigation of charge trapping in insulators. Journal of Applied Physics 75 (1) : 449-453. ScholarBank@NUS Repository. https://doi.org/10.1063/1.355873 | |
dc.identifier.issn | 00218979 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/95663 | |
dc.description.abstract | A new technique using a copper detector in a scanning electron microscope is introduced for the investigation of charging in insulators, and pure single-crystalline α-quartz samples are studied. The curve of charging rate varying with time is obtained, and the total charge trapped in the sample is accurately determined. Furthermore, the effects of electron-beam energy and current on charging are also examined. Our results suggest that electron-radiation-induced defects in the sample play major roles in the charge trapping. Details of the experimental setup are given. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.355873 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1063/1.355873 | |
dc.description.sourcetitle | Journal of Applied Physics | |
dc.description.volume | 75 | |
dc.description.issue | 1 | |
dc.description.page | 449-453 | |
dc.identifier.isiut | A1994MQ40200065 | |
Appears in Collections: | Staff Publications |
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