Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4740455
DC FieldValue
dc.titleTuning the interfacial hole injection barrier between p-type organic materials and Co using a MoO 3 buffer layer
dc.contributor.authorWang, Y.-Z.
dc.contributor.authorCao, L.
dc.contributor.authorQi, D.-C.
dc.contributor.authorChen, W.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorGao, X.-Y.
dc.date.accessioned2014-10-16T08:46:54Z
dc.date.available2014-10-16T08:46:54Z
dc.date.issued2012-08
dc.identifier.citationWang, Y.-Z., Cao, L., Qi, D.-C., Chen, W., Wee, A.T.S., Gao, X.-Y. (2012-08). Tuning the interfacial hole injection barrier between p-type organic materials and Co using a MoO 3 buffer layer. Journal of Applied Physics 112 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4740455
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/95360
dc.description.abstractWe demonstrate that the interfacial hole injection barrier Δ h between p-type organic materials (i.e., CuPc and pentacene) and Co substrate can be tuned by the insertion of a MoO 3 buffer layer. Using ultraviolet photoemission spectroscopy, it was found that the introduction of MoO 3 buffer layer effectively reduces the hole injection barrier from 0.8 eV to 0.4 eV for the CuPc/Co interface, and from 1.0 eV to 0.4 eV for the pentacene/Co interface, respectively. In addition, by varying the thickness of the buffer, the tuning effect of Δ h is shown to be independent of the thickness of MoO 3 interlayer at both CuPc/Co and pentacene/Co interfaces. This Fermi level pinning effect can be explained by the integer charge-transfer model. Therefore, the MoO 3 buffer layer has the potential to be applied in p-type organic spin valve devices to improve the device performance via reducing the interfacial hole injection barrier. © 2012 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4740455
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentCHEMISTRY
dc.description.doi10.1063/1.4740455
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume112
dc.description.issue3
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000308335400047
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

11
checked on Nov 24, 2020

WEB OF SCIENCETM
Citations

11
checked on Nov 24, 2020

Page view(s)

68
checked on Nov 29, 2020

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.