Surface transfer hole doping of epitaxial graphene using MoO3 thin film

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3441263

Title:	Surface transfer hole doping of epitaxial graphene using MoO3 thin film
Authors:	Chen, Z. Santoso, I. Wang, R. Xie, L.F. Mao, H.Y. Huang, H. Wang, Y.Z. Gao, X.Y. Chen, Z.K. Ma, D. Wee, A.T.S. Chen, W.
Issue Date:	24-May-2010
Citation:	Chen, Z., Santoso, I., Wang, R., Xie, L.F., Mao, H.Y., Huang, H., Wang, Y.Z., Gao, X.Y., Chen, Z.K., Ma, D., Wee, A.T.S., Chen, W. (2010-05-24). Surface transfer hole doping of epitaxial graphene using MoO3 thin film. Applied Physics Letters 96 (21) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3441263
Abstract:	Synchrotron-based in situ photoelectron spectroscopy investigations demonstrate effective surface transfer p-type doping of epitaxial graphene (EG) thermally grown on 4H-SiC(0001) via the deposition of MoO3 thin film on top. The large work function difference between EG and MoO3 facilitates electron transfer from EG to the MoO3 thin film. This leads to hole accumulation in the EG layer with an areal hole density of about 1.0× 1013 cm-2, and places the Fermi level 0.38 eV below the graphene Dirac point. © 2010 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/94986
ISSN:	00036951
DOI:	10.1063/1.3441263
Appears in Collections:	Staff Publications

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