Please use this identifier to cite or link to this item: https://doi.org/10.1021/ja805090z
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dc.titleSolution-gated epitaxial graphene as pH sensor
dc.contributor.authorAng, P.K.
dc.contributor.authorChen, W.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorKian, P.L.
dc.date.accessioned2014-10-16T08:40:42Z
dc.date.available2014-10-16T08:40:42Z
dc.date.issued2008-11-05
dc.identifier.citationAng, P.K., Chen, W., Wee, A.T.S., Kian, P.L. (2008-11-05). Solution-gated epitaxial graphene as pH sensor. Journal of the American Chemical Society 130 (44) : 14392-14393. ScholarBank@NUS Repository. https://doi.org/10.1021/ja805090z
dc.identifier.issn00027863
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/94842
dc.description.abstractA solution-gate field effect transistor (SGFET) has been fabricated on few-layer graphene (FLG). The ideally polarizable graphene/aqueous electrolyte interface allows the capacitive charging of the surface by hydroxyl (OH-) and hydroxonium ions (H3O+). The conductivity versus gate potential curve exhibits "V" shaped ambipolar transfer characteristics of graphene, with hole and electron mobilities of 3600 cm2/Vs and 2100 cm2/Vs, respectively. The shift of the negative gate potential with pH shows a supra-Nernstian response of 99 meV/pH. Our work points to the potential application of graphene in ultrafast and ultralow noise chemical or biological sensors. Copyright © 2008 American Chemical Society..
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/ja805090z
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.contributor.departmentPHYSICS
dc.description.doi10.1021/ja805090z
dc.description.sourcetitleJournal of the American Chemical Society
dc.description.volume130
dc.description.issue44
dc.description.page14392-14393
dc.description.codenJACSA
dc.identifier.isiut000260533400020
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