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Title: Possible intermediate in H2S dissociation on GaAs(100)
Authors: Wei, X.M. 
Liu, Q.P. 
Zou, Z.
Xu, G.Q. 
Issue Date: 1998
Citation: Wei, X.M., Liu, Q.P., Zou, Z., Xu, G.Q. (1998). Possible intermediate in H2S dissociation on GaAs(100). Applied Physics Letters 73 (19) : 2793-2795. ScholarBank@NUS Repository.
Abstract: The adsorption and dissociation of H2S on GaAs(100) has been studied using high-resolution electron energy loss spectroscopy, thermal desorption spectroscopy, and isotope exchange techniques. The dissociative adsorption of H2S at 100 K produces only H-As species with a vibrational frequency of 2072 cm-1. Upon warming to 200 K, the vibration of H-As clearly shifts to 2105 cm-1, corresponding to a free H-As species. In addition, the formation of H-Ga (1887 cm-1) is also observed upon thermal annealing. In coadsorption studies of H2S and D atoms, three main desorption features of H2S were observed at 135, 200, and 375 K, respectively. The peaks at 135 and 375 K can be attributed to the desorption of molecularly adsorbed H2S and the recombinative desorption of adsorbed H and HS, respectively. In addition to the 375 K peak, the desorption feature at 200 K also undergoes isotope exchange between coadsorbed D atoms and H2S. These observations strongly suggest that the dissociative adsorption of H2S on GaAs(100) involves an intermediate of Ga-HS - H-As. © 1998 American Institute of Physics.
Source Title: Applied Physics Letters
ISSN: 00036951
DOI: 10.1063/1.122559
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