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|Title:||Interaction of atomic hydrogen, HS and H2S on GaAs(100)||Authors:||Zou, Z.
|Issue Date:||22-Oct-1999||Citation:||Zou, Z.,Wei, X.M.,Liu, Q.P.,Huang, H.H.,Sim, W.S.,Xu, G.Q.,Huan, C.H.A. (1999-10-22). Interaction of atomic hydrogen, HS and H2S on GaAs(100). Chemical Physics Letters 312 (2-4) : 149-154. ScholarBank@NUS Repository.||Abstract:||Gaseous D-atoms are evidenced to react directly with adsorbed HS species, forming HD(g) and S remaining on the surface or HDS desorbing from the surface. On the other hand, exposing a D-covered GaAs(100) surface to H2S molecules causes a gradual decrease in the amount of adsorbed D-atoms and promotes the formation of HS(ad) without the observation of accompanying H(ad). The pure HS species covered surface generated by the coadsorption of H2S and D-atoms may lead to a more efficient S-passivation upon thermal annealing.||Source Title:||Chemical Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/94063||ISSN:||00092614|
|Appears in Collections:||Staff Publications|
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