Group 11 and 13 metal thiocarboxylate compounds as single source molecular precursor for bulk metal sulfide materials and thin films

Abstract

A number of new Cu(I), Ag(I), Ga(III) and In(III) metal thiocarboxylate compounds have been synthesized and characterized using various methods including X-ray crystallography. Thermal degradation of these compounds resulted in the formation of the corresponding metal sulfide materials. The metal sulfides thus obtained were characterized using XRD and SEM techniques. Solid solutions of the type (Et3NH)[In1-xGax(SC{O}Ph)4] have been used as single source precursors to the corresponding In2-xGaxS3 materials. In addition, compounds of the type [(Ph3P)CuM(SC{O}Ph)4], and[(Ph3P)2AgM(SC{O}R)4] (M = Ga3+ and In3+; R = Me and Ph) have been found to be useful as single source precursors for CuMS2, AgGaS2, AgInS2 and MIn5S8 materials and thin films.