Please use this identifier to cite or link to this item: https://doi.org/10.1209/0295-5075/92/27001
DC FieldValue
dc.titleGraphene transport at high carrier densities using a polymer electrolyte gate
dc.contributor.authorPachoud, A.
dc.contributor.authorJaiswal, M.
dc.contributor.authorAng, P.K.
dc.contributor.authorLoh, K.P.
dc.contributor.authorÖzyilmaz, B.
dc.date.accessioned2014-10-16T08:29:43Z
dc.date.available2014-10-16T08:29:43Z
dc.date.issued2010-10
dc.identifier.citationPachoud, A., Jaiswal, M., Ang, P.K., Loh, K.P., Özyilmaz, B. (2010-10). Graphene transport at high carrier densities using a polymer electrolyte gate. EPL 92 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1209/0295-5075/92/27001
dc.identifier.issn02955075
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/93898
dc.description.abstractWe report the study of graphene devices in Hall-bar geometry, gated with a polymer electrolyte. High densities of 6 × 1013/cm2 are consistently reached, significantly higher than with conventional back-gating. The mobility follows an inverse dependence on density, which can be correlated to a dominant scattering from weak scatterers. Furthermore, our measurements show a Bloch-Grüneisen regime until 100 K (at 6.2 × 1013/cm2), consistent with an increase of the density. Ubiquitous in our experiments is a small upturn in resistivity around 3 × 1013/cm2 , whose origin is discussed. We identify two potential causes for the upturn: the renormalization of Fermi velocity and an electrochemically enhanced scattering rate. Copyright © EPLA, 2010.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.contributor.departmentPHYSICS
dc.description.doi10.1209/0295-5075/92/27001
dc.description.sourcetitleEPL
dc.description.volume92
dc.description.issue2
dc.description.page-
dc.identifier.isiut000284470600027
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