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https://doi.org/10.1209/0295-5075/92/27001
DC Field | Value | |
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dc.title | Graphene transport at high carrier densities using a polymer electrolyte gate | |
dc.contributor.author | Pachoud, A. | |
dc.contributor.author | Jaiswal, M. | |
dc.contributor.author | Ang, P.K. | |
dc.contributor.author | Loh, K.P. | |
dc.contributor.author | Özyilmaz, B. | |
dc.date.accessioned | 2014-10-16T08:29:43Z | |
dc.date.available | 2014-10-16T08:29:43Z | |
dc.date.issued | 2010-10 | |
dc.identifier.citation | Pachoud, A., Jaiswal, M., Ang, P.K., Loh, K.P., Özyilmaz, B. (2010-10). Graphene transport at high carrier densities using a polymer electrolyte gate. EPL 92 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1209/0295-5075/92/27001 | |
dc.identifier.issn | 02955075 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/93898 | |
dc.description.abstract | We report the study of graphene devices in Hall-bar geometry, gated with a polymer electrolyte. High densities of 6 × 1013/cm2 are consistently reached, significantly higher than with conventional back-gating. The mobility follows an inverse dependence on density, which can be correlated to a dominant scattering from weak scatterers. Furthermore, our measurements show a Bloch-Grüneisen regime until 100 K (at 6.2 × 1013/cm2), consistent with an increase of the density. Ubiquitous in our experiments is a small upturn in resistivity around 3 × 1013/cm2 , whose origin is discussed. We identify two potential causes for the upturn: the renormalization of Fermi velocity and an electrochemically enhanced scattering rate. Copyright © EPLA, 2010. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | CHEMISTRY | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1209/0295-5075/92/27001 | |
dc.description.sourcetitle | EPL | |
dc.description.volume | 92 | |
dc.description.issue | 2 | |
dc.description.page | - | |
dc.identifier.isiut | 000284470600027 | |
Appears in Collections: | Staff Publications |
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