Please use this identifier to cite or link to this item: https://doi.org/10.1039/c1sc00739d
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dc.titleDisc-like 7, 14-dicyano-ovalene-3,4:10,11-bis(dicarboximide) as a solution-processible n-type semiconductor for air stable field-effect transistors
dc.contributor.authorLi, J.
dc.contributor.authorChang, J.-J.
dc.contributor.authorTan, H.S.
dc.contributor.authorJiang, H.
dc.contributor.authorChen, X.
dc.contributor.authorChen, Z.
dc.contributor.authorZhang, J.
dc.contributor.authorWu, J.
dc.date.accessioned2014-10-16T08:26:18Z
dc.date.available2014-10-16T08:26:18Z
dc.date.issued2012-03
dc.identifier.citationLi, J., Chang, J.-J., Tan, H.S., Jiang, H., Chen, X., Chen, Z., Zhang, J., Wu, J. (2012-03). Disc-like 7, 14-dicyano-ovalene-3,4:10,11-bis(dicarboximide) as a solution-processible n-type semiconductor for air stable field-effect transistors. Chemical Science 3 (3) : 846-850. ScholarBank@NUS Repository. https://doi.org/10.1039/c1sc00739d
dc.identifier.issn20416520
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/93611
dc.description.abstractLarge disc-like ovalene diimides (ODI and ODI-CN) were prepared for the first time mainly via Diels-Alder cycloaddition reactions at the bay regions of bisanthene. The CN-substituted ovalene diimide (ODI-CN) exhibited typical n-type semiconducting behaviour in solution processing OFET devices, showing high electron mobility up to 1.0 cm 2 V -1 s -1 in nitrogen atmosphere and 0.51 cm 2 V -1 s -1 in air together with good device stability. © 2012 The Royal Society of Chemistry.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1039/c1sc00739d
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.description.doi10.1039/c1sc00739d
dc.description.sourcetitleChemical Science
dc.description.volume3
dc.description.issue3
dc.description.page846-850
dc.identifier.isiut000299949500028
Appears in Collections:Staff Publications

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