Determination of the interface δ-hole density in a blue-emitting organic semiconductor diode by electromodulated absorption spectroscopy

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3467469

Title:	Determination of the interface δ-hole density in a blue-emitting organic semiconductor diode by electromodulated absorption spectroscopy
Authors:	Zhou, M. Png, R.-Q. Sivaramakrishnan, S. Chia, P.-J. Yong, C.-K. Chua, L.-L. Ho, P.K.H.
Issue Date:	13-Sep-2010
Citation:	Zhou, M., Png, R.-Q., Sivaramakrishnan, S., Chia, P.-J., Yong, C.-K., Chua, L.-L., Ho, P.K.H. (2010-09-13). Determination of the interface δ-hole density in a blue-emitting organic semiconductor diode by electromodulated absorption spectroscopy. Applied Physics Letters 97 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3467469
Abstract:	The hole density at the interface of a poly(fluorene-alt-triarylamine) (TFB) with p-doped poly(3,4-ethylenedioxythiophene) (PEDT) anodes has been determined from electromodulation of the TFB subgap polaron band. At 295 K, this δ-hole density σOSC is approximately 1× 1012 cm-2, for which the current-voltage characteristics indicate an Ohmic contact. However at 30 K, σOSC falls to 2× 1011 cm-2, and the contact characteristics approach the injecting-blocking boundary. The PEDT/TFB vacuum offset inside the device is inferred to be 0.1 eV, and so the Fermi level is not as deeply pinned in the TFB gap as suggested by ultraviolet photoemission measurements. © 2010 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/93561
ISSN:	00036951
DOI:	10.1063/1.3467469
Appears in Collections:	Staff Publications

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