Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/93347
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dc.titleCompositional mapping of the argon-methane-hydrogen system for polycrystalline to nanocrystalline diamond film growth in a hot-filament chemical vapor deposition system
dc.contributor.authorLin, T.
dc.contributor.authorYu, G.Y.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorShen, Z.X.
dc.contributor.authorLoh, K.P.
dc.date.accessioned2014-10-16T08:23:19Z
dc.date.available2014-10-16T08:23:19Z
dc.date.issued2000-10-23
dc.identifier.citationLin, T.,Yu, G.Y.,Wee, A.T.S.,Shen, Z.X.,Loh, K.P. (2000-10-23). Compositional mapping of the argon-methane-hydrogen system for polycrystalline to nanocrystalline diamond film growth in a hot-filament chemical vapor deposition system. Applied Physics Letters 77 (17) : 2692-2694. ScholarBank@NUS Repository.
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/93347
dc.description.abstractThe transition in diamond crystal morphology from well-faceted microcrystalline to nanocrystalline phases as a function of increasing argon (Ar) concentration has been studied in a hot-filament chemical vapor deposition (HFCVD) system. The range of Ar concentration in a Ar-methane-hydrogen mixture that permits well-faceted diamond growth is up to 90%. At a concentration of 95.5%, a marked transition into nanocrystalline diamond phase could be observed. Although no graphitic phases were observed by transmission electron microscope and x-ray diffraction up to 95.5% Ar concentration, Raman analyses revealed a proportionate increase in amorphous carbon content with an increase in Ar concentration. The addition of Ar appears to create an electron-rich gas environment because a plasma can be readily discharged by applying a bias to the sample. Analysis of the plasma by optical emission spectroscopy revealed a linear correlation between Ar addition and the occurrence of C2 dimers in the plasma. Our results identified the narrow Ar-methane-hydrogen composition window that is effective for the growth of thick and smooth nanocrystalline diamond in HFCVD. © 2000 American Institute of Physics.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.contributor.departmentPHYSICS
dc.description.sourcetitleApplied Physics Letters
dc.description.volume77
dc.description.issue17
dc.description.page2692-2694
dc.description.codenAPPLA
dc.identifier.isiutNOT_IN_WOS
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