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Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1286201
DC FieldValue
dc.titleAlternative NH4F/HCl solution for ultraclean Si(001) surface
dc.contributor.authorBok, T.H.
dc.contributor.authorYe, J.H.
dc.contributor.authorLi, S.F.Y.
dc.date.accessioned2014-10-16T08:20:02Z
dc.date.available2014-10-16T08:20:02Z
dc.date.issued2000-09
dc.identifier.citationBok, T.H., Ye, J.H., Li, S.F.Y. (2000-09). Alternative NH4F/HCl solution for ultraclean Si(001) surface. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 18 (5) : 2542-2548. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1286201
dc.identifier.issn07342101
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/93071
dc.description.abstractWet chemical cleaning of silicon was investigated by scanning tunneling microscopy and total reflection X-ray fluorescence spectrometry. Metallic impurities on silicon surface were found to occur via electrochemical reaction between metal ions and silicon substrate as the redox potentials of the metals were more positive than Si/SiO2. Complex reactions between chloride and metal ions resulted in less metal deposition on silicon surfaces.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1116/1.1286201
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.description.doi10.1116/1.1286201
dc.description.sourcetitleJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
dc.description.volume18
dc.description.issue5
dc.description.page2542-2548
dc.description.codenJVTAD
dc.identifier.isiut000089434800078
Appears in Collections:Staff Publications

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