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Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1503791
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dc.titleResist trimming in high-density CF4/O2 plasmas for sub-0.1 μm device fabrication
dc.contributor.authorSin, C.-Y.
dc.contributor.authorChen, B.-H.
dc.contributor.authorLoh, W.L.
dc.contributor.authorYu, J.
dc.contributor.authorYelehanka, P.
dc.contributor.authorSee, A.
dc.contributor.authorChan, L.
dc.date.accessioned2014-10-09T10:00:05Z
dc.date.available2014-10-09T10:00:05Z
dc.date.issued2002-09
dc.identifier.citationSin, C.-Y., Chen, B.-H., Loh, W.L., Yu, J., Yelehanka, P., See, A., Chan, L. (2002-09). Resist trimming in high-density CF4/O2 plasmas for sub-0.1 μm device fabrication. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20 (5) : 1974-1981. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1503791
dc.identifier.issn10711023
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/92306
dc.description.abstractThrough investigation of the effect of various process parameters on resist trimming, it is found that the resist trimming is a neutral-driven etching and trim rate can be enhanced by ion-assisted etching. The microloading effect is affected by process parameters in the same way as trim rate; it increases when the trim rate increases. This indicates that the microloading effect is caused by the chemical component of trimming.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1116/1.1503791
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentCHEMICAL & ENVIRONMENTAL ENGINEERING
dc.description.doi10.1116/1.1503791
dc.description.sourcetitleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
dc.description.volume20
dc.description.issue5
dc.description.page1974-1981
dc.description.codenJVTBD
dc.identifier.isiut000178669200029
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