Please use this identifier to cite or link to this item: https://doi.org/10.1039/b107795n
Title: Generation of Brønsted acid sites on Si-MCM-41 by grafting of phosphorus species
Authors: Kawi, S. 
Shen, S.C. 
Chew, P.L.
Issue Date: 2002
Citation: Kawi, S., Shen, S.C., Chew, P.L. (2002). Generation of Brønsted acid sites on Si-MCM-41 by grafting of phosphorus species. Journal of Materials Chemistry 12 (5) : 1582-1586. ScholarBank@NUS Repository. https://doi.org/10.1039/b107795n
Abstract: Phosphorus species could be grafted onto the surface of Si-MCM-41 by simply treating Si-MCM-41 with phosphoric acid for a very short period, followed by high temperature calcination. The existence and state of surface phosphorus species grafted on Si-MCM-41 are confirmed by XPS measurement. Using XRD and N2 adsorption measurements, the uniform mesoporous structure of MCM-41 is shown to be quite stable under phosphoric acid treatment. FTIR results show that the surface phosphorus species grafted onto the surface of MCM-41 can selectively increase the number of Brønsted acid sites on the surface without forming any Lewis acid sites. Using NH3-TPD, the mild acidity of the generated Brønsted acid sites on phosphorus-containing MCM-41 significantly enhances its catalytic activity for the dehydration of isopropanol.
Source Title: Journal of Materials Chemistry
URI: http://scholarbank.nus.edu.sg/handle/10635/92017
ISSN: 09599428
DOI: 10.1039/b107795n
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