Photoconductivity in poly[[o-(trimethylsilyl)phenyl]acetylene]

Abstract

Steady-state photoconductivity was studied in thin films of poly[[o-(trimethylsilyl)phenyl]acetylene], or poly(o-Me3SiPA) sandwiched between SnO2 and metal electrodes. Both the dark current density (Jd) and photocurrent density (Jph) depend superlinearly on the applied electric field. Jph also shows a superlinear dependence on light intensity. However, Jd and Jph are only weak functions of temperature at temperatures below room temperature. We conclude that the photoconductivity in poly(o-Me3SiPA) arises mainly from trap-modulated carrier photoemission from electrodes and the polymer is capable of effective transport of holes. © 1989.