Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.mseb.2005.08.099
DC FieldValue
dc.titleBimodal distribution of damage morphology generated by ion implantation
dc.contributor.authorMok, K.R.C.
dc.contributor.authorJaraiz, M.
dc.contributor.authorMartin-Bragado, I.
dc.contributor.authorRubio, J.E.
dc.contributor.authorCastrillo, P.
dc.contributor.authorPinacho, R.
dc.contributor.authorSrinivasan, M.P.
dc.contributor.authorBenistant, F.
dc.date.accessioned2014-10-09T07:06:13Z
dc.date.available2014-10-09T07:06:13Z
dc.date.issued2005-12-05
dc.identifier.citationMok, K.R.C., Jaraiz, M., Martin-Bragado, I., Rubio, J.E., Castrillo, P., Pinacho, R., Srinivasan, M.P., Benistant, F. (2005-12-05). Bimodal distribution of damage morphology generated by ion implantation. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 124-125 (SUPPL.) : 389-391. ScholarBank@NUS Repository. https://doi.org/10.1016/j.mseb.2005.08.099
dc.identifier.issn09215107
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/90521
dc.description.abstractA nucleation and evolution model of damage based on amorphous pockets (APs) has recently been developed and implemented in an atomistic kinetic Monte Carlo simulator. In the model, APs are disordered structures (InV m), which are agglomerates of interstitials (I) and vacancies (V). This model has been used to study the composition and size distribution of APs during different ion implantations. Depending strongly on the dose rate, ion mass and implant temperature, the APs can evolve to a defect population where the agglomerates have a similar number of I and V (n ≈ m), or to a defect population with pure I (m ≈ 0) and pure V (n ≈ 0) clusters, or a mixture of APs and clusters. This behaviour corresponds to a bimodal (APs/clusters) distribution of damage. As the AP have different thermal stability compared to the I and V clusters, the same damage concentration obtained through different implant conditions has a different damage morphology and, consequently, exhibit a different resistance to subsequent thermal treatments. © 2005 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.mseb.2005.08.099
dc.sourceScopus
dc.subjectDamage
dc.subjectImplant temperature
dc.subjectIon-implant
dc.typeConference Paper
dc.contributor.departmentCHEMICAL & BIOMOLECULAR ENGINEERING
dc.description.doi10.1016/j.mseb.2005.08.099
dc.description.sourcetitleMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
dc.description.volume124-125
dc.description.issueSUPPL.
dc.description.page389-391
dc.description.codenMSBTE
dc.identifier.isiut000233895800080
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.