Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/90518
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dc.titleAngled XPS analysis of low-k dielectric surfaces after cleaning
dc.contributor.authorTan, Y.S.
dc.contributor.authorChooi, S.Y.M.
dc.contributor.authorSin, C.-Y.
dc.contributor.authorEe, P.-Y.
dc.contributor.authorSrinivasan, M.P.
dc.contributor.authorPehkonen, S.O.
dc.date.accessioned2014-10-09T07:06:11Z
dc.date.available2014-10-09T07:06:11Z
dc.date.issued2005
dc.identifier.citationTan, Y.S.,Chooi, S.Y.M.,Sin, C.-Y.,Ee, P.-Y.,Srinivasan, M.P.,Pehkonen, S.O. (2005). Angled XPS analysis of low-k dielectric surfaces after cleaning. Diffusion and Defect Data Pt.B: Solid State Phenomena 103-104 : 331-336. ScholarBank@NUS Repository.
dc.identifier.isbn390845106X
dc.identifier.issn10120394
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/90518
dc.description.abstractThe N2/H2 plasma treatment is relatively poor in removing CuF2 contaminants and oxidized carbon contaminants on the dielectric sidewalls in comparison to other cleaning methods. Stripper A is very effective in removing any CuF2 contaminants on Cu surface both at the trench bottoms and dielectric sidewalls. However, stripper A causes carbon contaminants on the dielectric sidewalls to increase. Stripper B has a similar effectiveness as stripper A in removing carbon contaminants, but it is half as effective as stripper A in removing Cu, O, F contaminants. A two-step cleaning process that uses H/H2 plasma treatment followed by wet cleaning helps to improve contaminant removal. N2/H2 plasma treatment followed by DHF cleaning removes the largest amount of Cu(2+) contaminants from both the trench bottoms and dielectric sidewalls, especially CuO. N2/H2 plasma treatment followed by stripper A has been shown to be the best cleaning process among all the various cleaning methods evaluated here.
dc.sourceScopus
dc.subjectCleaning
dc.subjectContamination
dc.subjectLow-k dielectric
dc.subjectX-ray photoelectron spectroscopy
dc.typeConference Paper
dc.contributor.departmentCHEMICAL & BIOMOLECULAR ENGINEERING
dc.description.sourcetitleDiffusion and Defect Data Pt.B: Solid State Phenomena
dc.description.volume103-104
dc.description.page331-336
dc.description.codenDDBPE
dc.identifier.isiutNOT_IN_WOS
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