Please use this identifier to cite or link to this item: https://doi.org/10.1002/pola.24387
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dc.titleSynthesis of polyimides containing triphenylamine-substituted triazole moieties for polymer memory applications
dc.contributor.authorWang, K.-L.
dc.contributor.authorLiu, Y.-L.
dc.contributor.authorShih, I.-H.
dc.contributor.authorNeoh, K.-G.
dc.contributor.authorKang, E.-T.
dc.date.accessioned2014-10-09T07:03:28Z
dc.date.available2014-10-09T07:03:28Z
dc.date.issued2010-12-15
dc.identifier.citationWang, K.-L., Liu, Y.-L., Shih, I.-H., Neoh, K.-G., Kang, E.-T. (2010-12-15). Synthesis of polyimides containing triphenylamine-substituted triazole moieties for polymer memory applications. Journal of Polymer Science, Part A: Polymer Chemistry 48 (24) : 5790-5800. ScholarBank@NUS Repository. https://doi.org/10.1002/pola.24387
dc.identifier.issn0887624X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/90280
dc.description.abstractA series of thermally stable aromatic polyimides containing triphenylamine-substituted triazole moieties (AZTA-PI)s were prepared and characterized. The glass transition temperatures (Tg) of the polyimides were found to be in the range of 262-314 °C. The polyimides obtained by chemical imidization had inherent viscosities of 0.25-0.44 dL g -1 in N-methyl-2-pyrrolidinone. The number average molecular weights (Mn) and weight average molecular weights (Mw) were 1.9-3.2 × 104 and 3.2-5.6 × 104, respectively, and the polydispersity indices (PDI = Mw/Mn) were in the range of 1.70-1.78. A resistive switching device was constructed from the 4,4'-hexafluoroisopropylidenediphthalic dianhydride-based soluble polyimide (AZTA-PIa) in a sandwich structure of indium-tin oxide/polymer/Al. The as-fabricated device can be switched from the initial low-conductivity (OFF) state to the high-conductivity (ON) state at a switching threshold voltage of 2.5 V under either positive or negative electrical sweep, with an ON/OFF state current ratio in the order of 105 at -1 V. The device is able to remain in the ON state even after turning off the power or under a reverse bias. The nonvolatile and nonrewritable natures of the ON state indicate that the device is a write-once read-many times (WORM) memory. © 2010 Wiley Periodicals, Inc.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/pola.24387
dc.sourceScopus
dc.subjectdonor-acceptor
dc.subjecthigh performance polymers
dc.subjectnonvolatile
dc.subjectpolyimides
dc.subjectpolymer memory
dc.subjectsimulations
dc.subjectsynthesis
dc.subjectWORM
dc.typeArticle
dc.contributor.departmentCHEMICAL & BIOMOLECULAR ENGINEERING
dc.description.doi10.1002/pola.24387
dc.description.sourcetitleJournal of Polymer Science, Part A: Polymer Chemistry
dc.description.volume48
dc.description.issue24
dc.description.page5790-5800
dc.description.codenJPACE
dc.identifier.isiut000285485700018
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