Please use this identifier to cite or link to this item: https://doi.org/10.1021/cg301108t
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dc.titleStrong additive-surface interaction leads to the unusual revival of growth at solvent-poisoned faces of DL-alanine crystal
dc.contributor.authorHan, G.
dc.contributor.authorChow, P.S.
dc.contributor.authorTan, R.B.H.
dc.date.accessioned2014-10-09T07:02:40Z
dc.date.available2014-10-09T07:02:40Z
dc.date.issued2012-11-07
dc.identifier.citationHan, G., Chow, P.S., Tan, R.B.H. (2012-11-07). Strong additive-surface interaction leads to the unusual revival of growth at solvent-poisoned faces of DL-alanine crystal. Crystal Growth and Design 12 (11) : 5555-5560. ScholarBank@NUS Repository. https://doi.org/10.1021/cg301108t
dc.identifier.issn15287483
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/90211
dc.description.abstractThe effects of various anions and cations dissociated from a spectrum of inorganic salts on the growth of dl-alanine polar c-axis have been systematically investigated using in situ microscopic observations on single seed crystals. Surprisingly, it is observed that both the polar -c and +c ends of dl-alanine c-axis undergo a revival of solvent-poisoned dead growth in the presence of every one of the additives used in this study. Furthermore, it is found that divalent ions (e.g., Mg 2+ and SO 4 2-) promote the growth along dl-alanine c-axis more effectively than univalent ions (e.g., Na + and Cl -). Such an ion-induced growth acceleration of dl-alanine c-axis, contrary to the usual understanding, particularly shows an unusual case where important Coulombic interaction between additive and crystal surface can actually favor face growth. This interesting phenomenon is interpreted at the molecular level, with the role of surface roughening particularly highlighted. © 2012 American Chemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/cg301108t
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentCHEMICAL & BIOMOLECULAR ENGINEERING
dc.description.doi10.1021/cg301108t
dc.description.sourcetitleCrystal Growth and Design
dc.description.volume12
dc.description.issue11
dc.description.page5555-5560
dc.description.codenCGDEF
dc.identifier.isiut000311240100049
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