Please use this identifier to cite or link to this item: https://doi.org/10.1002/pola.24633
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dc.titleGrowing poly(N-vinylcarbazole) from the surface of graphene oxide via RAFT polymerization
dc.contributor.authorZhang, B.
dc.contributor.authorChen, Y.
dc.contributor.authorXu, L.
dc.contributor.authorZeng, L.
dc.contributor.authorHe, Y.
dc.contributor.authorKang, E.-T.
dc.contributor.authorZhang, J.
dc.date.accessioned2014-10-09T06:49:16Z
dc.date.available2014-10-09T06:49:16Z
dc.date.issued2011-05-01
dc.identifier.citationZhang, B., Chen, Y., Xu, L., Zeng, L., He, Y., Kang, E.-T., Zhang, J. (2011-05-01). Growing poly(N-vinylcarbazole) from the surface of graphene oxide via RAFT polymerization. Journal of Polymer Science, Part A: Polymer Chemistry 49 (9) : 2043-2050. ScholarBank@NUS Repository. https://doi.org/10.1002/pola.24633
dc.identifier.issn0887624X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/89040
dc.description.abstractA new approach on usage of S-1-dodecyl-Sâ€2-(α, αâ€2-dimethyl-αâ€3-acetic acid) trithiocarbonate (DDAT)-covalently functionalized graphene oxide (GO) as reversible addition fragmentation chain transfer (RAFT) agent for growing of poly(N-vinylcarbazole) (PVK) directly from the surface of GO was described. The PVK polymer covalently grafted onto GO has Mn of 8.05 à - 103, and a polydispersity of 1.43. The resulting material PVK-GO shows a good solubility in organic solvents when compared to GO, and a significant energy bandgap of â̂/2.49 eV. Bistable electrical switching and nonvolatile rewritable memory effect, with a turn-on voltage of about -1.7 V and an ON/OFF state current ratio in excess of 103, are demonstrated in the Al/PVK-GO/ITO structure. © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011 A new "grafting from" method to grow poly(N-vinylcarbazole) from the surface of graphene oxide via RAFT polymerization is described. This material was successfully used to fabricate a nonvolatile memory device, which exhibited a typical bistable electrical switching and rewritable memory effect. Copyright © 2011 Wiley Periodicals, Inc.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/pola.24633
dc.sourceScopus
dc.subjectfunctionalization of polymers
dc.subjectgraphene oxide
dc.subjectnanotechnology
dc.subjectnonvolatile rewritable memory
dc.subjectpoly(N-vinylcarbazole)
dc.subjectradical polymerization
dc.subjectreversible addition fragmentation chain transfer (RAFT)
dc.subjectsynthesis
dc.typeArticle
dc.contributor.departmentCHEMICAL & BIOMOLECULAR ENGINEERING
dc.description.doi10.1002/pola.24633
dc.description.sourcetitleJournal of Polymer Science, Part A: Polymer Chemistry
dc.description.volume49
dc.description.issue9
dc.description.page2043-2050
dc.description.codenJPACE
dc.identifier.isiut000288966600013
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