Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2004.05.053
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dc.titleCharacterization of low-k dielectric trench surface cleaning after a fluorocarbon etch
dc.contributor.authorTan, Y.S.
dc.contributor.authorChooi, S.Y.M.
dc.contributor.authorSin, C.-Y.
dc.contributor.authorEe, P.-Y.
dc.contributor.authorSrinivasan, M.P.
dc.contributor.authorPehkonen, S.O.
dc.date.accessioned2014-10-09T06:44:33Z
dc.date.available2014-10-09T06:44:33Z
dc.date.issued2004-09
dc.identifier.citationTan, Y.S., Chooi, S.Y.M., Sin, C.-Y., Ee, P.-Y., Srinivasan, M.P., Pehkonen, S.O. (2004-09). Characterization of low-k dielectric trench surface cleaning after a fluorocarbon etch. Thin Solid Films 462-463 (SPEC. ISS.) : 250-256. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.053
dc.identifier.issn00406090
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/88637
dc.description.abstractThe cleaning process of low-k dielectric trench structures used in sub-0.13 μm technology was investigated. These trenches were fabricated from silicon carbide, silicon oxide and CVD SiCOH low-k film using a fluorocarbon etching chemistry. The compared cleaning methods include N2/H2 plasma treatment, semi-aqueous organic strippers, dilute HF and combinations of plasma treatment and the aforementioned chemicals. Angle-resolved X-ray photoelectron spectroscopy (XPS) was used to investigate the nature and quantity of the contaminants deposited on the copper surfaces at the bottom of the trenches and on the dielectric sidewalls. Significant Cu-, C-, F- and O-containing contaminants were found on both the copper surface at the trench bottoms and the dielectric sidewalls after etching. The cleaning treatments were generally found to be ineffective when used individually. On the contrary, a two-step approach, viz. N2/H2 plasma treatment followed by wet clean was found to give favorable removal of contaminants. © 2004 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2004.05.053
dc.sourceScopus
dc.subjectCleaning
dc.subjectContamination
dc.subjectLow-k dielectric
dc.subjectX-ray photoelectron spectroscopy
dc.typeArticle
dc.contributor.departmentCHEMICAL & BIOMOLECULAR ENGINEERING
dc.description.doi10.1016/j.tsf.2004.05.053
dc.description.sourcetitleThin Solid Films
dc.description.volume462-463
dc.description.issueSPEC. ISS.
dc.description.page250-256
dc.description.codenTHSFA
dc.identifier.isiut000223812800052
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