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Title: Synthesis of tellurium nanowires and their transport property
Authors: Liang, F.
Qian, H. 
Keywords: Field effect transistor
On-off ratio
Tellurium nanowires
Threshold voltage
Issue Date: 15-Feb-2009
Citation: Liang, F., Qian, H. (2009-02-15). Synthesis of tellurium nanowires and their transport property. Materials Chemistry and Physics 113 (2-3) : 523-526. ScholarBank@NUS Repository.
Abstract: By using Na2TeO3 and Na2S2O3 as starting materials, tellurium nanowires with diameter around 25 nm were synthesized via a hydrothermal reaction at 160 °C, X-ray diffraction (XRD) showed that the product was a pure trigonal phase and TEM image indicated the widths of nanowires were in the range of 10-40 nm. Through further high-resolution TEM (HRTEM) analysis, a preferential growth direction along the [0 0 1] zone axis was observed. The intrinsic structure of tellurium, as well as the directing role of PVP leading to the formation of the 1D nanostructure was briefly discussed. Field effect transistor from individual nanowire was constructed, the nanowire device revealed a pronounced gating effect, and yield a threshold voltage of 40 V, an on-off ratio as high as 103 , and a mobility of 163 cm2 V-1 S-1 at Vds = -0.1 V. Crown Copyright © 2008.
Source Title: Materials Chemistry and Physics
ISSN: 02540584
DOI: 10.1016/j.matchemphys.2008.07.101
Appears in Collections:Staff Publications

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