Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3671430
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dc.titleWell-isolated L1 0 FePt-SiN x-C nanocomposite films with large coercivity and small grain size
dc.contributor.authorDong, K.F.
dc.contributor.authorLi, H.H.
dc.contributor.authorPeng, Y.G.
dc.contributor.authorJu, G.
dc.contributor.authorChow, G.M.
dc.contributor.authorChen, J.S.
dc.date.accessioned2014-10-07T09:57:03Z
dc.date.available2014-10-07T09:57:03Z
dc.date.issued2012-04-01
dc.identifier.citationDong, K.F., Li, H.H., Peng, Y.G., Ju, G., Chow, G.M., Chen, J.S. (2012-04-01). Well-isolated L1 0 FePt-SiN x-C nanocomposite films with large coercivity and small grain size. Journal of Applied Physics 111 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3671430
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86976
dc.description.abstractFePt-SiN x-C films on TiN/CrRu/glass substrate with large coercivity, (001) texture, and small isolated grains were obtained by co-sputtering FePt, Si 3N 4, and C targets at 380°C. It was found that when C was doped into the FePt-SiN x films, the out-of-plane coercivity increased while the small in-plane coercivity remained unchanged. Grain size decreased and grain size distribution became more uniform with increasing the C doping concentration. The x-ray photoelectron spectroscopy (XPS) depth profile showed a uniform depth distribution of Si in the FePt layer. The Si2p XPS spectrum implied the existence of Fe-Si bonds, indicating that SiN x was located at the FePt grain boundaries and was stable against diffusion to the surface, thus favoring grain isolation. Well-isolated FePt (001) granular films with coercivity higher than 21.5 kOe and an average grain size of 5.6 nm were obtained by doping 40 vol. of SiN x and 20 vol. of C. © 2012 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3671430
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1063/1.3671430
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume111
dc.description.issue7
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000303282400009
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