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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/86953
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dc.titleRoom temperature ferromagnetism in Al-doped/Al2O 3-doped ZnO film
dc.contributor.authorMa, Y.W.
dc.contributor.authorDing, J.
dc.contributor.authorRan, M.
dc.contributor.authorHuang, X.L.
dc.contributor.authorNg, C.M.
dc.date.accessioned2014-10-07T09:56:45Z
dc.date.available2014-10-07T09:56:45Z
dc.date.issued2010
dc.identifier.citationMa, Y.W.,Ding, J.,Ran, M.,Huang, X.L.,Ng, C.M. (2010). Room temperature ferromagnetism in Al-doped/Al2O 3-doped ZnO film. Materials Research Society Symposium Proceedings 1201 : 219-224. ScholarBank@NUS Repository.
dc.identifier.isbn9781605111742
dc.identifier.issn02729172
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86953
dc.description.abstractIn this manuscript, we study the magnetic property of Al-doped/Al 2O3-doped ZnO films. We found that metallic Al-doped ZnO film shows room temperature ferromagnetism (RTFM). RTFM is correlated with the interaction of Al metallic clusters and ZnO matrix. The charge transfer has been observed between metallic Al and ZnO matrix. Therefore, RTFM in metallic Al doped ZnO may be highly probable due to charge transfer between metallic Al clusters and ZnO matrix. For Al2O3-doped ZnO film (denoted as (Zn1-x, A1x)O), RTFM was found in (Zn1-x, A1x)O film with a certain Al concentration range (16 mol%
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.sourcetitleMaterials Research Society Symposium Proceedings
dc.description.volume1201
dc.description.page219-224
dc.description.codenMRSPD
dc.identifier.isiutNOT_IN_WOS
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