Please use this identifier to cite or link to this item: https://doi.org/10.1166/jnn.2011.2700
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dc.titleNiW/Ru underlayer for CoPt-SiO 2 granular perpendicular recording media
dc.contributor.authorHuang, L.S.
dc.contributor.authorChen, J.S.
dc.contributor.authorHu, J.F.
dc.contributor.authorDing, Y.F.
dc.date.accessioned2014-10-07T09:56:34Z
dc.date.available2014-10-07T09:56:34Z
dc.date.issued2011-03
dc.identifier.citationHuang, L.S., Chen, J.S., Hu, J.F., Ding, Y.F. (2011-03). NiW/Ru underlayer for CoPt-SiO 2 granular perpendicular recording media. Journal of Nanoscience and Nanotechnology 11 (3) : 2636-2639. ScholarBank@NUS Repository. https://doi.org/10.1166/jnn.2011.2700
dc.identifier.issn15334880
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86939
dc.description.abstractThis paper presented the usage of the NiW/Ru underlayer to replace the single Ru underlayer for promoting CoPt hcp (0002) texture. Fcc (111) textured NiW film was used to induce the Ru hcp (0002) texture. It was found that the utilization of the (111) textured NiW alloying layer promoted the formation of Ru(0002) texture, enhanced the magnetic grain isolation and generated the uniform grains with gain size less than 10 nm in CoPt-SiO 2 recording layer. The out-of-plane coercivity was also enhanced with the growth of 10 nm NiW underlayer below the Ru layer. © 2011 American Scientific Publishers.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1166/jnn.2011.2700
dc.sourceScopus
dc.subjectCoPt
dc.subjectNiW underlayer
dc.subjectPerpendicu1ar recording media
dc.typeConference Paper
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1166/jnn.2011.2700
dc.description.sourcetitleJournal of Nanoscience and Nanotechnology
dc.description.volume11
dc.description.issue3
dc.description.page2636-2639
dc.identifier.isiut000288102300127
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