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Title: Intrinsic polyatomic defects in Sc2(WO4)3
Authors: Zhou, Y.
Rao, R.P. 
Adams, S. 
Keywords: Computer simulations
Ion conducting solids
Lattice dynamics
Polyatomic defect
Scandium tungstate
Tungstate migration
Issue Date: 16-Jun-2011
Citation: Zhou, Y., Rao, R.P., Adams, S. (2011-06-16). Intrinsic polyatomic defects in Sc2(WO4)3. Solid State Ionics 192 (1) : 34-37. ScholarBank@NUS Repository.
Abstract: The intrinsic formation of polyatomic defects in Sc2(WO 4)3-type structures is studied by Mott Littleton calculations and Molecular Dynamics simulations. Defects involving the WO 4 2- tetrahedron are found to be energetically favorable when compared to isolated W and O defects. WO4 2- Frenkel and (2Sc3+, 3WO4 2-) Schottky defects exhibit formation energies of 1.23 eV and 1.97 eV, respectively and therefore may occur as intrinsic defects in Sc2(WO4)3 at elevated temperatures. WO4 2- vacancy and interstitial migration processes have been simulated by classical Molecular Dynamics simulations. The interstitial defect exhibits a nearly 10 times higher mobility (with a migration energy of 0.68 eV), than the vacancy mechanism (with a slightly higher migration energy of 0.74 eV) and thus should dominate the overall ionic conduction. Still both models reproduce the experimental activation energy (0.67 eV) nearly within experimental uncertainty. © 2010 Elsevier B.V. All rights reserved.
Source Title: Solid State Ionics
ISSN: 01672738
DOI: 10.1016/j.ssi.2010.06.024
Appears in Collections:Staff Publications

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