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Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2005.09.067
DC FieldValue
dc.titleEffects of Si(001) surface amorphization on ErSi2 thin film
dc.contributor.authorTan, E.J.
dc.contributor.authorKon, M.L.
dc.contributor.authorPey, K.L.
dc.contributor.authorLee, P.S.
dc.contributor.authorZhang, Y.W.
dc.contributor.authorWang, W.D.
dc.contributor.authorChi, D.Z.
dc.date.accessioned2014-10-07T09:55:52Z
dc.date.available2014-10-07T09:55:52Z
dc.date.issued2006-05-10
dc.identifier.citationTan, E.J., Kon, M.L., Pey, K.L., Lee, P.S., Zhang, Y.W., Wang, W.D., Chi, D.Z. (2006-05-10). Effects of Si(001) surface amorphization on ErSi2 thin film. Thin Solid Films 504 (1-2) : 157-160. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.067
dc.identifier.issn00406090
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86878
dc.description.abstractIn a materials study of ErSi2/Si(001) as a potential candidate for Schottky source/drain NMOS application, the properties of ErSi2 thin film were investigated with varying degrees of Si(001) surface amorphization. The amorphization was carried out by in situ Ar plasma cleaning and Si pre-amorphization implant. It was found that the ErSi2 thin film becomes smoother but less textured and less epitaxial with Si(001) with increasing degree of the Si surface amorphization. In addition, an increased oxygen penetration during rapid thermal annealing occurs with increasing substrate amorphization. © 2005 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2005.09.067
dc.sourceScopus
dc.subjectAmorphization
dc.subjectErbium silicide
dc.subjectMorphology
dc.subjectThin film
dc.typeConference Paper
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1016/j.tsf.2005.09.067
dc.description.sourcetitleThin Solid Films
dc.description.volume504
dc.description.issue1-2
dc.description.page157-160
dc.description.codenTHSFA
dc.identifier.isiut000236486200038
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