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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3563573
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dc.titleCombined effects of bilayer structure and ion substitutions on bismuth ferrite thin films
dc.contributor.authorWu, J.
dc.contributor.authorWang, J.
dc.contributor.authorXiao, D.
dc.contributor.authorZhu, J.
dc.date.accessioned2014-10-07T09:55:44Z
dc.date.available2014-10-07T09:55:44Z
dc.date.issued2011-04-01
dc.identifier.citationWu, J., Wang, J., Xiao, D., Zhu, J. (2011-04-01). Combined effects of bilayer structure and ion substitutions on bismuth ferrite thin films. Journal of Applied Physics 109 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3563573
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86865
dc.description.abstractTo understanding the combined effects of bilayer structure and ion substitutions on electrical behavior of BiFeO3 thin films, the Bi0.90La0.10Fe0.90Zn0.10O 3/Bi0.90La0.10Fe0.90Sn 0.10O3 bilayers with different thickness ratios were fabricated on SrRuO3/Pt/TiO2/SiO2/Si(100) substrates by radio frequency sputtering. Their dielectric constant increases and the fatigue endurance becomes better with increasing Bi 0.90La0.10Fe0.90Zn0.10O3 thickness ratios. The bilayer with the thickness ratio of 210: 90 exhibits a high remanent polarization, and a better fatigue behavior is induced by higher driving electric fields and frequencies. © 2011 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3563573
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1063/1.3563573
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume109
dc.description.issue7
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000289949000098
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