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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/86836
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dc.titleVacancy-induced room-temperature ferromagnetism in Ga-TiO 2
dc.contributor.authorBao, N.N.
dc.contributor.authorYi, J.B.
dc.contributor.authorFan, H.M.
dc.contributor.authorQin, X.B.
dc.contributor.authorZhang, P.
dc.contributor.authorWang, B.Y.
dc.contributor.authorDing, J.
dc.contributor.authorLi, S.
dc.date.accessioned2014-10-07T09:55:24Z
dc.date.available2014-10-07T09:55:24Z
dc.date.issued2012-05
dc.identifier.citationBao, N.N., Yi, J.B., Fan, H.M., Qin, X.B., Zhang, P., Wang, B.Y., Ding, J., Li, S. (2012-05). Vacancy-induced room-temperature ferromagnetism in Ga-TiO 2. Scripta Materialia 66 (10) : 821-824. ScholarBank@NUS Repository.
dc.identifier.issn13596462
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86836
dc.description.abstractGa-TiO 2 films were deposited by pulsed laser deposition. It is found that the as-deposited films demonstrate room-temperature ferromagnetism that depends on the doping concentration and oxygen partial pressure during the deposition processing. Analysis indicates that the ferromagnetism is not associated with the impurities, but with Ti vacancies, a finding that is verified by positron annihilation spectroscopy. In addition, the possible origins of the ferromagnetism appearing in TiO 2 doped with other elements that possess various valence states, such as Na, Mg, Sn, Ta and W, is discussed. © 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.scriptamat.2012.02.031
dc.sourceScopus
dc.subjectDiluted magnetic semiconductor
dc.subjectRoom-temperature ferromagnetism
dc.subjectTiO 2
dc.subjectVacancy
dc.typeArticle
dc.contributor.departmentNUS NANOSCIENCE & NANOTECH INITIATIVE
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.sourcetitleScripta Materialia
dc.description.volume66
dc.description.issue10
dc.description.page821-824
dc.description.codenSCMAF
dc.identifier.isiut000302756400026
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