Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3276543
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dc.titleTwinning rotation and ferroelectric behavior of epitaxial BiFeO3 (001) thin film
dc.contributor.authorLiu, H.
dc.contributor.authorYang, P.
dc.contributor.authorYao, K.
dc.contributor.authorWang, J.
dc.date.accessioned2014-10-07T09:55:14Z
dc.date.available2014-10-07T09:55:14Z
dc.date.issued2010
dc.identifier.citationLiu, H., Yang, P., Yao, K., Wang, J. (2010). Twinning rotation and ferroelectric behavior of epitaxial BiFeO3 (001) thin film. Applied Physics Letters 96 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3276543
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86825
dc.description.abstractA twinning rotation structure is revealed by reciprocal space mappings obtained from synchrotron X-ray diffraction for the epitaxial BiFeO3 thin film that was grown on (001) SrTiO3 substrate. The lattice strain is not fully relaxed at a film thickness of 720 nm. The structure is indexed as a monoclinic with lattice parameters a=5.610 (1) Å, b=5.529 (1) Å, c=4.031 (1) Å, and Β=89.34 (1) °. The twinning rotation leads to an enhanced remanent polarization (2 Pr =164 μC/ cm 2, 2 Ec =510 kV/cm) and greatly reduced leakage current density of 1.2× 10-6 A/ cm2 at 100 kV/cm. © 2010 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3276543
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentSINGAPORE SYNCHROTRON LIGHT SOURCE
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1063/1.3276543
dc.description.sourcetitleApplied Physics Letters
dc.description.volume96
dc.description.issue1
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000273473200032
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