Please use this identifier to cite or link to this item:
|Title:||Orientation dependence of ferroelectric behavior of BiFeO3 thin films||Authors:||Wu, J.
|Issue Date:||2009||Citation:||Wu, J., Wang, J. (2009). Orientation dependence of ferroelectric behavior of BiFeO3 thin films. Journal of Applied Physics 106 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3261841||Abstract:||Multiferroic BiFeO3 (BFO) thin films with (111), (100), (110) preferred, and random orientations were deposited by radio frequency magnetron sputtering on SrRuO3 -buffered SrTiO3 (111), SrTiO 3 (100), SrTiO3 (110), and Pt (111) /Ti/ SiO2 /Si (100) substrates, respectively. The orientation dependences of ferroelectric and fatigue behavior of the BFO thin films were investigated. As expected, the (111)-oriented BFO thin film exhibits the highest, giant ferroelectric polarization (2 Pr =196.9 μC/ cm2) at 1 kHz and room temperature using positive up negative down measurement, while the (100)-oriented BFO thin film possesses an almost fatigue-free behavior up to 5.25× 107 switching cycles when measured at 100 kHz and room temperature. The observed behavior confirms that the largest spontaneous polarization direction and the fatigue endurance are (111) and (100) for BFO thin films, respectively. Regardless of the film orientation, the charge carriers that are responsible for dielectric relaxation and conductivity are oxygen vacancies (VO •• ). © 2009 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/86620||ISSN:||00218979||DOI:||10.1063/1.3261841|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 8, 2019
WEB OF SCIENCETM
checked on Nov 29, 2019
checked on Dec 14, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.