Please use this identifier to cite or link to this item: https://doi.org/10.1088/0256-307X/27/8/087501
DC FieldValue
dc.titleObservation of room ferromagnetism in Cu-implanted crystal ZnO
dc.contributor.authorLi, T.-J.
dc.contributor.authorLi, G.-P.
dc.contributor.authorGao, X.-X.
dc.contributor.authorChen, J.-S.
dc.date.accessioned2014-10-07T09:52:38Z
dc.date.available2014-10-07T09:52:38Z
dc.date.issued2010-08
dc.identifier.citationLi, T.-J., Li, G.-P., Gao, X.-X., Chen, J.-S. (2010-08). Observation of room ferromagnetism in Cu-implanted crystal ZnO. Chinese Physics Letters 27 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0256-307X/27/8/087501
dc.identifier.issn0256307X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86603
dc.description.abstractIon implantation technique is used to study the magnetic properties of Cu-doped ZnO. The room temperature ferromagnetism in the Cu-implanted ZnO samples is observed. From the photoluminescence spectrum of implanted samples we observe a broad green emission around 510 nm, which is related to defects in the samples. X-ray photoelectron spectroscopy measurement shows that Cu ions are in the mixed oxidation state of +1 or +2 and substitute for the Zn2+ ions of the ZnO matrix. We argue that the ferromagnetism is related to these defects, and the substitution of Cu2+ into Zn2+ sites in crystal ZnO could contribute to the observed ferromagnetism. © 2010 Chinese Physical Society and IOP Publishing Ltd.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1088/0256-307X/27/8/087501
dc.description.sourcetitleChinese Physics Letters
dc.description.volume27
dc.description.issue8
dc.description.page-
dc.identifier.isiut000280577200058
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