Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.electacta.2013.04.024
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dc.titleMechanism and dissolution rates of anodic oxide films on silicon
dc.contributor.authorLiu, D.Q.
dc.contributor.authorBlackwood, D.J.
dc.date.accessioned2014-10-07T09:51:49Z
dc.date.available2014-10-07T09:51:49Z
dc.date.issued2013
dc.identifier.citationLiu, D.Q., Blackwood, D.J. (2013). Mechanism and dissolution rates of anodic oxide films on silicon. Electrochimica Acta 105 : 209-217. ScholarBank@NUS Repository. https://doi.org/10.1016/j.electacta.2013.04.024
dc.identifier.issn00134686
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86531
dc.description.abstractThe electropolishing of p-type silicon has been investigated over a wide range of wafer conductivities (p- to p++) and HF concentrations (0.01-15 wt%) by potentiodynamic polarization. The rate of oxide dissolution was determined from the plateau current density observed in the electropolishing region of the IV curve; i.e. where the growth and dissolution rates of the anodic oxide film are equal. The IV curves of silicon are reminiscent of a corrosion process control by the dissolution of a salt film in which the rate of reaction is controlled by the removal of dissolved products away from the surface rather than reactants to the surface as previously proposed. For the silicon anodic oxide films this can be by either mass transport or further chemical reaction with HF species in solution. It is shown that this means the dissolution rate should be described by: Dissolution rate = DKsp[HF]2/δ + k/A Ksp[HF]6 This relationship is shown to hold for the whole concentration range investigated. Because hydrofluoric acid is a weak acid this rate equation converts to a cubic equation when written in terms of the total HF concentration as opposed to only the HF species, but in this form the connection with the dissolution mechanism is lost. © 2013 Elsevier Ltd. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.electacta.2013.04.024
dc.sourceScopus
dc.subjectElectropolishing
dc.subjectPotentiodynamic polarization
dc.subjectSalt film
dc.subjectSilicon
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1016/j.electacta.2013.04.024
dc.description.sourcetitleElectrochimica Acta
dc.description.volume105
dc.description.page209-217
dc.description.codenELCAA
dc.identifier.isiut000322414800028
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