Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3598168
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dc.titleLow temperature synthesized quaternary chalcogenide Cu 2ZnSnS4 from nano-crystallite binary sulfides
dc.contributor.authorWang, Y.
dc.contributor.authorGong, H.
dc.date.accessioned2014-10-07T09:51:26Z
dc.date.available2014-10-07T09:51:26Z
dc.date.issued2011-08
dc.identifier.citationWang, Y., Gong, H. (2011-08). Low temperature synthesized quaternary chalcogenide Cu 2ZnSnS4 from nano-crystallite binary sulfides. Journal of the Electrochemical Society 158 (8) : H800-H803. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3598168
dc.identifier.issn00134651
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86502
dc.description.abstractThe quaternary chalcogenide Cu2ZnSnS4 (CZTS) is known to be a potential cost-effective absorber material in solar cells. In this study, CZTS has been successfully synthesized by low temperature annealing of binary sulfides of CuS, ZnS and SnS nano-crystallites which were produced by a simple chemical bath deposition technique. The achieved formation temperature of CZTS was 300 C, which was significantly lower than reported values. The formation of CZTS was investigated through characterization techniques - x-ray diffraction (XRD), Raman spectroscopy and elemental mapping in scanning transmission electron microscopy (STEM). Sample annealing was performed in a Quartz tube under 1.0 10-2 Torr without using the traditional toxic, corrosive and flammable H2S gas. Significant improvement in CZTS crystallinity was achieved through annealing at temperatures up to 450°C. However, traces of Cu2S in CZTS were found after annealing at 500 °C. The optical and electrical properties of CZTS were also investigated. The CZTS sample showed a direct band gap of 1.47 eV, p-type conduction and a resistivity of 1.06 ωcm. © 2011 The Electrochemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.3598168
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1149/1.3598168
dc.description.sourcetitleJournal of the Electrochemical Society
dc.description.volume158
dc.description.issue8
dc.description.pageH800-H803
dc.description.codenJESOA
dc.identifier.isiut000292154300079
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