Please use this identifier to cite or link to this item: https://doi.org/10.1002/adma.200803701
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dc.titleLabile ferroelastic nanodomains in bilayered ferroelectric thin films
dc.contributor.authorAnbusathaiah, V.
dc.contributor.authorKan, D.
dc.contributor.authorKartawidjaja, F.C.
dc.contributor.authorMahjoub, R.
dc.contributor.authorArredondo, M.A.
dc.contributor.authorWicks, S.
dc.contributor.authorTakeuchi, I.
dc.contributor.authorWang, J.
dc.contributor.authorNagarajan, V.
dc.date.accessioned2014-10-07T09:51:09Z
dc.date.available2014-10-07T09:51:09Z
dc.date.issued2009-09-11
dc.identifier.citationAnbusathaiah, V., Kan, D., Kartawidjaja, F.C., Mahjoub, R., Arredondo, M.A., Wicks, S., Takeuchi, I., Wang, J., Nagarajan, V. (2009-09-11). Labile ferroelastic nanodomains in bilayered ferroelectric thin films. Advanced Materials 21 (34) : 3497-3502. ScholarBank@NUS Repository. https://doi.org/10.1002/adma.200803701
dc.identifier.issn09359648
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86479
dc.description.abstractLabile ferroelastic nanodomains in bilayered ferroelectric thin films are analyzed. Bilayered thin-film structures comprising of a PbZr 0.3Ti0.7O3 deposited on top of a PbZr 0.7Ti0.3O3 were used in the experiment. The films were deposited by a multistep sol-gel route assisted by spin coating on Pt/Ti/SiO2/Si substrates. X-Ray-diffraction measurements ysung Philips X-pert MRD verified that the structure of the PZT layers was polycrystalline with a preferential orientation along the (001)/(100) direction with small fraction of (111) orientation. The typical gap between each pad was about 10μm. Ferroelectric hystersis loops and PUND measurements were performed using a Radiant Premier II at room temperature. Cross-sectional TEM analysis was performed using a JEOL 3000F TEM operated at an accelerating voltage of 300 KV.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/adma.200803701
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1002/adma.200803701
dc.description.sourcetitleAdvanced Materials
dc.description.volume21
dc.description.issue34
dc.description.page3497-3502
dc.description.codenADVME
dc.identifier.isiut000270380100008
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