Please use this identifier to cite or link to this item: https://doi.org/10.1021/jp104460r
Title: Improved ferroelectric and fatigue behavior of Bi0.95Gd 0.05FeO3/BiFe0.95Mn0.05O 3 bilayered thin films
Authors: Wu, J. 
Wang, J. 
Issue Date: 18-Nov-2010
Citation: Wu, J., Wang, J. (2010-11-18). Improved ferroelectric and fatigue behavior of Bi0.95Gd 0.05FeO3/BiFe0.95Mn0.05O 3 bilayered thin films. Journal of Physical Chemistry C 114 (45) : 19318-19321. ScholarBank@NUS Repository. https://doi.org/10.1021/jp104460r
Abstract: Bi0.95Gd0.05FeO3/BiFe 0.95Mn0.05O3 (BGFO/BFMO) bilayered thin films with different thickness ratios of BGFO and BFMO layers were deposited in situ on SrRuO3-buffered Pt/TiO2/SiO2/Si(100) substrates by off-axis radio frequency magnetic sputtering, where a highly (110) orientation was developed. Their leakage currents and dielectric loss decrease dramatically due to the introduction of the highly resistive bottom BFMO layer, which promotes the texture development of the top BGFO layer by refining the grain cluster structure in the bilayered structure. The BGFO/BFMO bilayered thin film with the thickness fraction of ∼1:1 exhibits a larger remanent polarization and improved fatigue endurance as compared to those of other film compositions, where an almost fatigue-free behavior was observed up to 10 10 switching cycles. © 2010 American Chemical Society.
Source Title: Journal of Physical Chemistry C
URI: http://scholarbank.nus.edu.sg/handle/10635/86436
ISSN: 19327447
DOI: 10.1021/jp104460r
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