Please use this identifier to cite or link to this item: https://doi.org/10.1002/pssr.201105129
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dc.titleEffect of oxygen content during sputtering on the electrical properties of bismuth ferrite thin films
dc.contributor.authorWu, J.
dc.contributor.authorWang, J.
dc.contributor.authorXiao, D.
dc.contributor.authorZhu, J.
dc.date.accessioned2014-10-07T09:48:44Z
dc.date.available2014-10-07T09:48:44Z
dc.date.issued2011-06
dc.identifier.citationWu, J., Wang, J., Xiao, D., Zhu, J. (2011-06). Effect of oxygen content during sputtering on the electrical properties of bismuth ferrite thin films. Physica Status Solidi - Rapid Research Letters 5 (5-6) : 190-192. ScholarBank@NUS Repository. https://doi.org/10.1002/pssr.201105129
dc.identifier.issn18626254
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86270
dc.description.abstractThe effect of oxygen content during sputtering on the leakage mechanism and the ferroelectric properties of BiFeO3 with a sintering aid of CuO (CuO-BFO) was investigated, where all thin films with (100) orientation were grown on SrRuO3/LaAlO3(100) substrates by radio frequency sputtering with an oxygen content of 0-40%. The ferroelectric properties in CuO-BFO are tailored by changing the oxygen content during sputtering, indicating a small growth window. The Schottky emission dominates the leakage behavior regardless of oxygen content. The thin film with an oxygen content of ∼20% during sputtering has a higher remanent polarization of 2Pr ∼ 184.7 μC/cm2, due to its lower leakage current density and an improved phase purity. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) In this Letter, BiFeO3 thin films with a sintering aid of CuO (CuO-BFO) were investigated. Schottky emission is involved in their leakage mechanism regardless of the oxygen content during sputtering. In contrast, the remanent polarization of CuO-BFO thin films is strongly dependent on the oxygen content during sputtering, where a higher remanent polarization of 2Pr ∼ 184.7 μC/cm2 is induced for the thin film with an oxygen content of ∼20% during sputtering. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/pssr.201105129
dc.sourceScopus
dc.subjectBismuth ferrite
dc.subjectElectrical properties
dc.subjectFerroelectrics
dc.subjectLeakage mechanism
dc.subjectThin films
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1002/pssr.201105129
dc.description.sourcetitlePhysica Status Solidi - Rapid Research Letters
dc.description.volume5
dc.description.issue5-6
dc.description.page190-192
dc.identifier.isiut000291060300008
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