Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jnoncrysol.2013.06.022
Title: Durability and photo-electric characteristics of a mille-feuille structured amorphous selenium (a-Se)-arsenic selenide (As2Se3) multi-layered thin film
Authors: Saito, I.
Masuzawa, T.
Kudo, Y.
Pittner, S.
Yamada, T.
Koh, A.T.T.
Chua, D.H.C. 
Mori, Y.
Zahn, D.R.T.
Amaratunga, G.A.J.
Okano, K.
Keywords: Amorphous
Nano-layer
Photoconductor
Photoelectric materials
Issue Date: 2013
Citation: Saito, I., Masuzawa, T., Kudo, Y., Pittner, S., Yamada, T., Koh, A.T.T., Chua, D.H.C., Mori, Y., Zahn, D.R.T., Amaratunga, G.A.J., Okano, K. (2013). Durability and photo-electric characteristics of a mille-feuille structured amorphous selenium (a-Se)-arsenic selenide (As2Se3) multi-layered thin film. Journal of Non-Crystalline Solids 378 : 96-100. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jnoncrysol.2013.06.022
Abstract: A mille-feuille structured amorphous selenium (a-Se)-arsenic selenide (As2Se3) multi-layered thin film and a mixed amorphous Se-As2Se3 film is compared from a durability perspective and photo-electric perspective. The former is durable to incident laser induced degradation after numerous laser scans and does not crystallise till 105 of annealing, both of which are improved properties from the mixed evaporated film. In terms of photo-electric properties, the ratio between the photocurrent and the dark current improved whereas the increase of the dark current was higher than that of As2Se3 due to the unique current path developed within the mille-feuille structure. Implementing this structure into various amorphous semiconductors may open up a new possibility towards structure-sensitive amorphous photoconductors. © 2013 Elsevier B.V.
Source Title: Journal of Non-Crystalline Solids
URI: http://scholarbank.nus.edu.sg/handle/10635/86265
ISSN: 00223093
DOI: 10.1016/j.jnoncrysol.2013.06.022
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