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|Title:||Charge defects-induced electrical properties in bismuth ferrite bilayered thin films||Authors:||Wu, J.
A. Thin films
D. Electrical properties
|Issue Date:||Aug-2013||Citation:||Wu, J., Zhang, B., Wang, X., Wang, J., Zhu, J., Xiao, D. (2013-08). Charge defects-induced electrical properties in bismuth ferrite bilayered thin films. Materials Research Bulletin 48 (8) : 2973-2977. ScholarBank@NUS Repository. https://doi.org/10.1016/j.materresbull.2013.03.042||Abstract:||Effects of charge defects on electrical properties of BiFeO 3/Bi0.90La0.10Fe0.85Zn 0.15O3 (BFO/BLFZO) bilayered thin films are investigated, and the concentration of charge defects is controlled by changing their deposition temperatures during sputtering. It is of great interest to note that these bilayers endure an orientation transition from (1 0 0) to (1 1 0) with increasing deposition temperatures. An enhanced dielectric, ferroelectric, and fatigue behavior has been demonstrated in these bilayers deposited at an optimum growth window. A better electrical behavior of 2Pr ∼ 138.2 μC/cm2, 2Ec ∼ 657.3 kV/cm, εr ∼ 189, and tan δ ∼ 2.72% has been demonstrated in BFO/BLFZO bilayers, and the underlying physical mechanism is also addressed. © 2013 Elsevier Ltd. All rights reserved.||Source Title:||Materials Research Bulletin||URI:||http://scholarbank.nus.edu.sg/handle/10635/86210||ISSN:||00255408||DOI:||10.1016/j.materresbull.2013.03.042|
|Appears in Collections:||Staff Publications|
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