Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3671988
DC FieldValue
dc.title(001) textured L1 0-FePt pseudo spin valve with TiN spacer
dc.contributor.authorHo, P.
dc.contributor.authorHan, G.C.
dc.contributor.authorHe, K.H.
dc.contributor.authorChow, G.M.
dc.contributor.authorChen, J.S.
dc.date.accessioned2014-10-07T09:47:26Z
dc.date.available2014-10-07T09:47:26Z
dc.date.issued2011-12-19
dc.identifier.citationHo, P., Han, G.C., He, K.H., Chow, G.M., Chen, J.S. (2011-12-19). (001) textured L1 0-FePt pseudo spin valve with TiN spacer. Applied Physics Letters 99 (25) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3671988
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86159
dc.description.abstractTiN was investigated as a potential spacer material in L1 0-FePt based pseudo spin valves (PSV). PSVs with the structure MgO/L1 0-Fe 50Pt 50 (20 nm)/TiN (5 nm)/L1 0-Fe 50Pt 50 (x nm) were fabricated, where x was varied from 5 to 20 nm. The highest giant magnetoresistance (GMR) ratio of 0.61% was obtained for the PSV with a top L1 0-FePt thickness of 20 nm. Contributions to the GMR arose from both the spin dependent scattering at the FePt/TiN interfaces and domain wall resistivity. Magnon magnetoresistance was also observed in the fabricated PSVs. © 2011 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3671988
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1063/1.3671988
dc.description.sourcetitleApplied Physics Letters
dc.description.volume99
dc.description.issue25
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000299031600040
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