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|Title:||Crystallization of sol-gel processed PZT films with low temperatures and short times using UV-Assisted rapid thermal annealing||Authors:||Shannigrahi, S.R.
|Issue Date:||2006||Citation:||Shannigrahi, S.R., Yao, K., Ng, S.C.P., Tay, F.E.H. (2006). Crystallization of sol-gel processed PZT films with low temperatures and short times using UV-Assisted rapid thermal annealing. Integrated Ferroelectrics 84 (1) : 211-218. ScholarBank@NUS Repository. https://doi.org/10.1080/10584580601086865||Abstract:||Excimer UV-assisted rapid thermal annealing (UV-RTA) was employed to obtain the perovskite crystalline phase of Pb(Zr0.53Ti0.47) O3 (PZT) films processed from three different sols. Sol-I contained 2-methoxyethanol as the solvent and Pb-acetate, Zr-acetylacetonate, Ti-isopropoxide were the precursors for Pb, Zr, and Ti respectively. Sol-II contained acetic acid as the solvent and the corresponding precursors were Pb-acetate, Zr-propoxide and Ti-isopropoxide. Sol-III contained 1,3-propanediol as the solvent and the respective precursors were Pb-acetate, Zr-acetylacetonate, and Ti-diisopropoxide bis-acetylacetonate. It was observed that sol-III was the most sensitive to UV (222 nm) exposure at an intensity of -40 mW/cm2 and resulted single phase perovskite PZT films at an annealing temperature of 500°C by employing UV-RTA in compare to that of 550'C or more required for obtaining single phase perovskite films using the sol-I and II even under UV-irradiation. Moreover, the films obtained from the sol-III have good ferroelectric properties with a Pr value of -20 μC/cm2 along with Ec of 38 kV/cm. The probable dissociation chemistry has been discussed based on the Fourier transform infrared (FTIR) analysis.||Source Title:||Integrated Ferroelectrics||URI:||http://scholarbank.nus.edu.sg/handle/10635/85910||ISSN:||10584587||DOI:||10.1080/10584580601086865|
|Appears in Collections:||Staff Publications|
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