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Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.matlet.2012.04.014
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dc.titleSolution synthesis of CdIn 2S 4 nanocrystals and their photoelectrical application
dc.contributor.authorPeng, S.
dc.contributor.authorMhaisalkar, S.G.
dc.contributor.authorRamakrishna, S.
dc.date.accessioned2014-10-07T09:10:32Z
dc.date.available2014-10-07T09:10:32Z
dc.date.issued2012-07-15
dc.identifier.citationPeng, S., Mhaisalkar, S.G., Ramakrishna, S. (2012-07-15). Solution synthesis of CdIn 2S 4 nanocrystals and their photoelectrical application. Materials Letters 79 : 216-218. ScholarBank@NUS Repository. https://doi.org/10.1016/j.matlet.2012.04.014
dc.identifier.issn0167577X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/85651
dc.description.abstractCdIn 2S 4 nanocrystals were obtained through a hot-injection process and characterized by using X-ray powder diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and UV-vis spectroscopy. The results showed that the CdIn 2S 4 nanocrystals with a size of about 10 nm possessed cubic phase and the bandgap of the alloyed nanocrystals was determined to be 2.2 eV, which corresponded to that of the bulk materials. Furthermore, the CdIn 2S 4 ink based on these nanocrystals can be used to produce films for prototype photovoltaic devices. After heat treatment at 450°C for 30 min in Ar and sulfur atmospheres, the CdIn 2S 4-based solar cell exhibited a primary efficiency of 0.48% under AM 1.5 irradiation (100 mW cm -2). © 2012 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.matlet.2012.04.014
dc.sourceScopus
dc.subjectCdIn 2S 4
dc.subjectNanocrystals
dc.subjectSolar cells
dc.subjectSolution synthesis
dc.typeArticle
dc.contributor.departmentMECHANICAL ENGINEERING
dc.description.doi10.1016/j.matlet.2012.04.014
dc.description.sourcetitleMaterials Letters
dc.description.volume79
dc.description.page216-218
dc.description.codenMLETD
dc.identifier.isiut000305767200064
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