Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.3678636
DC Field | Value | |
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dc.title | Origin of the enhanced polarization in la and Mg co-substituted BiFeO 3 thin film during the fatigue process | |
dc.contributor.author | Ke, Q. | |
dc.contributor.author | Kumar, A. | |
dc.contributor.author | Lou, X. | |
dc.contributor.author | Zeng, K. | |
dc.contributor.author | Wang, J. | |
dc.date.accessioned | 2014-10-07T09:09:03Z | |
dc.date.available | 2014-10-07T09:09:03Z | |
dc.date.issued | 2012-01-23 | |
dc.identifier.citation | Ke, Q., Kumar, A., Lou, X., Zeng, K., Wang, J. (2012-01-23). Origin of the enhanced polarization in la and Mg co-substituted BiFeO 3 thin film during the fatigue process. Applied Physics Letters 100 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3678636 | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/85527 | |
dc.description.abstract | We have studied the polarization fatigue of La and Mg co-substituted BiFeO 3 thin film, where a polarization peak is observed during the fatigue process. The origin of such anomalous behavior is analyzed on the basis of the defect evolution using temperature-dependent impedance spectroscopy. It shows that the motion of oxygen vacancies (V O ••) is associated with a lower energy barrier, accompanied by the injection of electrons into the film during the fatigue process. A qualitative model is proposed to explain the fatigue behavior, which involves the modification of the Schottky barrier upon the accumulation of V O •• at the metal-dielectric interface. © 2012 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3678636 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | MATERIALS SCIENCE AND ENGINEERING | |
dc.contributor.department | MECHANICAL ENGINEERING | |
dc.description.doi | 10.1063/1.3678636 | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 100 | |
dc.description.issue | 4 | |
dc.description.page | - | |
dc.description.coden | APPLA | |
dc.identifier.isiut | 000300064500051 | |
Appears in Collections: | Staff Publications |
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