Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2007.07.051
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dc.titleA new fabrication method of low stress PECVD SiNx layers for biomedical applications
dc.contributor.authorWei, J.
dc.contributor.authorOng, P.L.
dc.contributor.authorTay, F.E.H.
dc.contributor.authorIliescu, C.
dc.date.accessioned2014-10-07T09:00:25Z
dc.date.available2014-10-07T09:00:25Z
dc.date.issued2008-06-30
dc.identifier.citationWei, J., Ong, P.L., Tay, F.E.H., Iliescu, C. (2008-06-30). A new fabrication method of low stress PECVD SiNx layers for biomedical applications. Thin Solid Films 516 (16) : 5181-5188. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2007.07.051
dc.identifier.issn00406090
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84797
dc.description.abstractA new fabrication method to produce low residual stress PECVD SiNx layers at high deposition rates was developed and their biomedical applications were reported in this paper. This new method employed up to 600 W high power to fabricate low stress SiNx layers in high frequency (13.56 MHz). By adjusting the composition of reactant gases, the residual stress can be lowered to 4 MPa and high deposition rate up to 320 nm/min can be achieved. In addition, this paper also investigated the influence of other important parameter, such as pressure, power and gases flow rates. Moreover, by using this optimized process, an 11 μm thick low stress SiNx layer was produced, which will be used to fabricate large window area for cell culture. Finally, a successful cell culture test involving cultivating mouse stem cells onto the porous membrane made of these low stress PECVD SiNx layers indicated that these layers are biocompatible and are suitable for biomedical applications. © 2007 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2007.07.051
dc.sourceScopus
dc.subjectBiomedical applications
dc.subjectHigh power
dc.subjectLow stress
dc.subjectPECVD
dc.subjectSilicon nitride
dc.typeArticle
dc.contributor.departmentMECHANICAL ENGINEERING
dc.description.doi10.1016/j.tsf.2007.07.051
dc.description.sourcetitleThin Solid Films
dc.description.volume516
dc.description.issue16
dc.description.page5181-5188
dc.description.codenTHSFA
dc.identifier.isiut000257452200008
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