1. ScholarBank@NUS
  2. 1. Staff
  3. Staff Publications
Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2168511
DC FieldValue
dc.titleErratum: Strain relaxation due to V-pit formation in In xGa 1-xN/GaN epilayers grown on sapphire (Journal of Applied Physics (2005) 98 (084906))
dc.contributor.authorSong, T.L.
dc.contributor.authorChua, S.J.
dc.contributor.authorFitzgerald, E.A.
dc.date.accessioned2014-10-07T04:52:17Z
dc.date.available2014-10-07T04:52:17Z
dc.date.issued2006-02-01
dc.identifier.citationSong, T.L., Chua, S.J., Fitzgerald, E.A. (2006-02-01). Erratum: Strain relaxation due to V-pit formation in In xGa 1-xN/GaN epilayers grown on sapphire (Journal of Applied Physics (2005) 98 (084906)). Journal of Applied Physics 99 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2168511
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84403
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2168511
dc.sourceScopus
dc.typeOthers
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.2168511
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume99
dc.description.issue3
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000235341000099
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.