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Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2005.09.081
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dc.titleWork function tuning of metal nitride electrodes for advanced CMOS devices
dc.contributor.authorRen, C.
dc.contributor.authorFaizhal, B.B.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorLi, M.-F.
dc.contributor.authorYeo, Y.-C.
dc.contributor.authorTrigg, A.D.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:51:52Z
dc.date.available2014-10-07T04:51:52Z
dc.date.issued2006-05-10
dc.identifier.citationRen, C., Faizhal, B.B., Chan, D.S.H., Li, M.-F., Yeo, Y.-C., Trigg, A.D., Balasubramanian, N., Kwong, D.-L. (2006-05-10). Work function tuning of metal nitride electrodes for advanced CMOS devices. Thin Solid Films 504 (1-2) : 174-177. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.081
dc.identifier.issn00406090
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84367
dc.description.abstractA novel method for tuning the work function of metal nitride (MN x) metal gates by incorporating lanthanide elements into MN x is demonstrated for application in nMOSFETs. The work function (ΦM) of MNx metal gates, such as TaN and HfN, can be tuned continuously down to 4.2-4.3 eV even after rapid thermal annealing (RTA) up to 1000 °C by incorporating lanthanide elements, such as terbium (Tb), erbium (Er), or ytterbium (Yb), into MNx gates. In addition, the lanthanide-MNx metal gates exhibit good thermal stability on both SiO2 and HfAlO high-κ dielectrics in terms of equivalent oxide thickness (EOT) and leakage current, making them promising metal gate candidates in the conventional self-align bulk-Si CMOS process flow. The effect of N in lanthanide-MNx is also studied and the results show that the enhanced nitrogen content in lanthanide-MNx could be of importance for the thermal stability as well as other properties of MNx. © 2005 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2005.09.081
dc.sourceScopus
dc.subjectLanthanide
dc.subjectMetal gate electrode
dc.subjectMetal nitride
dc.subjectWork function tuning
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.tsf.2005.09.081
dc.description.sourcetitleThin Solid Films
dc.description.volume504
dc.description.issue1-2
dc.description.page174-177
dc.description.codenTHSFA
dc.identifier.isiut000236486200042
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