Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.532649
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dc.titleUltrafast phase transitions in Ge1Sb2Te4 films induced by femtosecond laser beam
dc.contributor.authorWang, Q.F.
dc.contributor.authorShi, L.P.
dc.contributor.authorWang, Z.B.
dc.contributor.authorLan, B.
dc.contributor.authorYi, K.J.
dc.contributor.authorHong, M.H.
dc.contributor.authorChong, T.C.
dc.date.accessioned2014-10-07T04:51:29Z
dc.date.available2014-10-07T04:51:29Z
dc.date.issued2003
dc.identifier.citationWang, Q.F., Shi, L.P., Wang, Z.B., Lan, B., Yi, K.J., Hong, M.H., Chong, T.C. (2003). Ultrafast phase transitions in Ge1Sb2Te4 films induced by femtosecond laser beam. Proceedings of SPIE - The International Society for Optical Engineering 5069 : 165-172. ScholarBank@NUS Repository. https://doi.org/10.1117/12.532649
dc.identifier.issn0277786X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84333
dc.description.abstractUltrafast phase transitions triggered by single femtosecond laser pulse in Ge1Sb2Te4 films were investigated. By proper control of the film thickness, ultrafast crystalline and amorphous phase transformations have been achieved in Ge1Sb2Te 4 films. These ultrafast phase transitions were confirmed by reflectivity change and X-ray diffraction measurement.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1117/12.532649
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1117/12.532649
dc.description.sourcetitleProceedings of SPIE - The International Society for Optical Engineering
dc.description.volume5069
dc.description.page165-172
dc.description.codenPSISD
dc.identifier.isiut000186054300024
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