Please use this identifier to cite or link to this item:
https://doi.org/10.1117/12.532649
DC Field | Value | |
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dc.title | Ultrafast phase transitions in Ge1Sb2Te4 films induced by femtosecond laser beam | |
dc.contributor.author | Wang, Q.F. | |
dc.contributor.author | Shi, L.P. | |
dc.contributor.author | Wang, Z.B. | |
dc.contributor.author | Lan, B. | |
dc.contributor.author | Yi, K.J. | |
dc.contributor.author | Hong, M.H. | |
dc.contributor.author | Chong, T.C. | |
dc.date.accessioned | 2014-10-07T04:51:29Z | |
dc.date.available | 2014-10-07T04:51:29Z | |
dc.date.issued | 2003 | |
dc.identifier.citation | Wang, Q.F., Shi, L.P., Wang, Z.B., Lan, B., Yi, K.J., Hong, M.H., Chong, T.C. (2003). Ultrafast phase transitions in Ge1Sb2Te4 films induced by femtosecond laser beam. Proceedings of SPIE - The International Society for Optical Engineering 5069 : 165-172. ScholarBank@NUS Repository. https://doi.org/10.1117/12.532649 | |
dc.identifier.issn | 0277786X | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/84333 | |
dc.description.abstract | Ultrafast phase transitions triggered by single femtosecond laser pulse in Ge1Sb2Te4 films were investigated. By proper control of the film thickness, ultrafast crystalline and amorphous phase transformations have been achieved in Ge1Sb2Te 4 films. These ultrafast phase transitions were confirmed by reflectivity change and X-ray diffraction measurement. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1117/12.532649 | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1117/12.532649 | |
dc.description.sourcetitle | Proceedings of SPIE - The International Society for Optical Engineering | |
dc.description.volume | 5069 | |
dc.description.page | 165-172 | |
dc.description.coden | PSISD | |
dc.identifier.isiut | 000186054300024 | |
Appears in Collections: | Staff Publications |
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