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Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.456856
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dc.titleTemperature effect for exciton dynamics in ZnCdSe/ZnSe QWs
dc.contributor.authorZeng, J.N.
dc.contributor.authorLu, Y.F.
dc.contributor.authorOka, Y.
dc.date.accessioned2014-10-07T04:50:50Z
dc.date.available2014-10-07T04:50:50Z
dc.date.issued2002
dc.identifier.citationZeng, J.N., Lu, Y.F., Oka, Y. (2002). Temperature effect for exciton dynamics in ZnCdSe/ZnSe QWs. Proceedings of SPIE - The International Society for Optical Engineering 4426 : 43-46. ScholarBank@NUS Repository. https://doi.org/10.1117/12.456856
dc.identifier.issn0277786X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84277
dc.description.abstractTemperature dependence of photoluminescence (PL) from Zn1-xCdxSe/ZnSe Asymmetric Double Quantum Wells (ADQWs) has been studied by using time-resolved spectroscopy. With raising temperature, the different transient behaviors of exciton emission are observed. In the regime of T
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1117/12.456856
dc.sourceScopus
dc.subjectTemperature dependence ot time-resolved photoluminescence (TRPL) spectroscopy
dc.subjectTunneling process
dc.subjectZn1-xCdxSe/ZnSe ADQWs
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1117/12.456856
dc.description.sourcetitleProceedings of SPIE - The International Society for Optical Engineering
dc.description.volume4426
dc.description.page43-46
dc.description.codenPSISD
dc.identifier.isiut000176422100007
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