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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/84272
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dc.titleTDDB characteristics of ultra-thin HfN/HfO2 gate stack
dc.contributor.authorYang, H.
dc.contributor.authorSa, N.
dc.contributor.authorTang, L.
dc.contributor.authorLiu, X.
dc.contributor.authorKang, J.
dc.contributor.authorHan, R.
dc.contributor.authorYu, H.Y.
dc.contributor.authorRen, C.
dc.contributor.authorLi, M.-F.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:50:47Z
dc.date.available2014-10-07T04:50:47Z
dc.date.issued2004
dc.identifier.citationYang, H.,Sa, N.,Tang, L.,Liu, X.,Kang, J.,Han, R.,Yu, H.Y.,Ren, C.,Li, M.-F.,Chan, D.S.H.,Kwong, D.-L. (2004). TDDB characteristics of ultra-thin HfN/HfO2 gate stack. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2 : 808-811. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84272
dc.description.abstractIn this paper, the area and electric field dependence of time dependent dielectric breakdown (TDDB) for the ultra thin HiN/HfO2 gate stack (EOT∼0.9nm) under negative constant voltage stress (CVS) was studied. Area scaling consistent with Weibull statistics as in SiO2 was observed in the HfN/HfO2 gate stack, demonstrating that intrinsic effects dominate TDDB characteristics of the ultra thin HfN/HfO2 gate stack. A new model on the mechanism of electric-field dependent TDDB was proposed. In this model, the reliability of HfN/HfO2 gate stack is dominated by the breakdown of HfD2 bulk layer under high electric field stressing and by the breakdown of the interfacial layer (IL) under low electric field stressing, respectively. © 2004 IEEE.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
dc.description.volume2
dc.description.page808-811
dc.identifier.isiutNOT_IN_WOS
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